国家/地区 美国（15） 韩国（11） 中国（10） 世界知识产权组织（7） 英国（2） 日本（2）
IPC部 C（30）
IPC大类 C23（30）
IPC小类 H01L（30）
IPC C23C016/26（19） H01L021/02（16） C23C016/02（13）
C01B032/186（10） H01L021/285（9） H01L021/768（9）
C23C016/455（6） B82Y040/00（5） C23C016/34（5）
H01L023/532（5） C23C016/505（4） C23C016/511（4）
B82Y030/00（3） C23C016/01（3） C23C016/458（3）
发明人 LEE C（4） LEE C S（4） BYUN K（3）
BYUN K E（3） KIM K（3） SHIN K（3）
SHIN K W（3） AHN S J（2） AN S（2）
ELSAYED K A M（2） IFUKU R（2） KIM D W（2）
KIM Y（2） LI J（2） MAAROUF A A（2）
公开年 2023（30）
申请年 2022（22）  2021（6）  2023（2） 
专利权人 SAMSUNG ELEC.（7） APPLIED MATE.（3） TOKYO ELECTR.（2） UNIV IMAM AB.（2）

Plasma deposition of material onto two dimensional layer of first substrate, involves depositing protective layer directly onto dimensional layer by pulsed plasma deposition process, and depositing second layer onto protective layer by second plasma deposition process.

RIAZIMEHR S, KNOOPS H, SUNDARAM R

Branched nano-wire array composite photoelectric film used for photo cathode protection, has composite heterojunction system cadmium sulfide/reduced graphene oxide quantum dots/titanium dioxide branched nanowire array composite photoelectric film.

HOU B, LU G, SUN M, JIANG X

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

High temperature furnace tube for use in semiconductor process, has supporting plate distributed with multiple layers for supporting multiple substrates, where each substrate is placed on each layer of supporting plate.

WANG H, ZHANG S, SHEN H, LV C, ZHOU D, KIM J, PARK J S, WANG J, JIA S, ZHANG X, KIM Y

Preparing copper-clad aluminum composite welding strip used in interconnection strip, bus belt comprises surface cleaning of copper strip and aluminum rod, wrapping, multiple drawing of composite copper rod, and ultrasonic testing, drawing composite copper wire, heat annealing and tin plating.

DONG W, ZHANG W, GAO L, CHEN Q

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Chromium metal etching solution useful for integrated circuit comprises ceric ammonium nitrate, hydrogen peroxide, oxalic acid, dodecyldimethylbenzylammonium chloride, auxiliary agent and deionized water (remaining amount).

TANG X, HE K, GE Y

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K