国家/地区 中国（14）
IPC部 H（14）
IPC大类 H01（14） H10（4）
IPC小类 H01L（14） H10B（4）
IPC H01L021/02（6） H01L029/786（6） H01L029/16（5）
H01L029/423（5） H01L029/06（4） H01L029/66（4）
H01L029/78（4） H01L021/336（3） H01L027/11582（3）
H01L029/08（3） H01L029/417（3） H01L029/45（3）
H01L029/51（3） H01L027/108（2） H01L029/10（2）
发明人 BYUN K（5） BYUN K E（5） JIN C（5）
KIM C（5） SHIN K（5） SHIN K W（5）
LEE C（4） LEE C S（4） LI C（4）
KIM H（3） AHN S J（2） AN S（2）
AN X（2） JIN J（2） KIM S（2）
公开年 2023（14）
申请年 2022（14）
专利权人 SAMSUNG ELECTRONICS CO LTD（14）

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Micro light emitting semiconductor device for display apparatus, has first and second semiconductor layers, light emitting layer and color conversion layer with porous layer having quantum dot, where doping-type of second semiconductor layer is different from doping-type of color conversion layer.

HWANG J, PARK J, HWANG K, KIM D, HWANG K W, HWANG J S, JIN D

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Image sensor comprises substrate including multiple photoelectric conversion elements, variable filter layer provided on substrate, and multiple micro lenses provided on variable filter layer, which comprises multiple first electrodes in first direction, and having first width in second direction.

JOE I, LEE K, KANG S, JANG M, CHANG M, KANG S K, LEEKWANGMIN, CHO I S, CHO I, LI G

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Field effect transistor comprises substrate, gate electrode on substrate, insulating layer, source electrode on insulating layer, drain electrode spaced apart from source electrode, channel between source electrode and drain electrode comprising two-dimensional material and tensile strain region.

KWON J, SEOL M, YOO M, YOO M S, QUAN J, YU M

Integrated circuit device comprises substrate including word line trench and first recess adjacent to first side wall portion of inner wall of word line trench, and channel region on inner wall of word line trench, and channel region including first channel region and second channel region.

KIM K, JIN J

Vertical channel array transistor for use in semiconductor device, has graphene insertion layer that is formed between source/drain electrode and channel pattern.

BYUN K, KIM S, KIM C, SHIN K, LEE C, LI C, JIN C, JIN S, BYUN K E, SHIN K W, LEE C S