国家/地区 中国（10）
IPC部 C（10） B（2）
IPC大类 C23（10）
IPC小类 C23C（10） C01B（2） C30B（2）
IPC C23C016/26（10）
发明人 CHEN X（10）
公开年 2016（4） 2018（2） 2020（2）
申请年 2016（3）  2015（2）  2019（2）  2021（2） 
专利权人 SHANGHAI ADV.（3）

Method for manufacturing flexible strain sensor used for detecting human body motion, involves etching to remove metal mesh screen to ensure flexibility of sensing material if substrate is non-metal stretchable mesh screen.

CHEN X, LI Z, WANG M, MA Y

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Stacked silicon quantum dot heterojunction solar cell, comprises aluminum electrode layer vapor-deposited on n-type silicon substrate surface and graphene layer provided on p-type laminated film surface.

SHAN D, ZHOU S, TANG M, YANG R, CAO Y, QIAN S, QIU S, CHEN X

Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with hydrochloric acid, and then cleaning copper foil.

ZHANG K, SONG R, LIU P, LI W, CHEN X, MA F, HE D, LIU X

Preparation of large size graphene glass involves cleaning large size quartz glass, putting in high temperature tubular furnace, pumping reaction chamber, introducing argon gas and hydrogen gas, and reducing temperature to room temperature.

LIU Z, CHEN X, ZHANG Y

Method for preparing nitrogen-doped graphene film, involves introducing gas carbon source under condition of high temperature so as to form nitrogen-doped graphene film by carbon deposition.

FANG X, CAI W, WANG C, CHEN X, YANG L

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Preparation of boron-doped graphene film comprises placing substrate in dual temperature zone system, then boron carbon solid source within dual temperature zone system and heating.

FANG X, CHEN X, WAN J, WANG C, YOU Y, XU Y

Preparation of graphene thin film, involves providing copper foil, electrochemically etching surface of copper foil, and growing graphene thin film by chemical vapor deposition on surface of copper foil.

CAI W, FANG X, CHEN X, WANG C