国家/地区 中国（28）
IPC部 C（28）
IPC大类 C01（28）
IPC小类 C01B（28）
IPC H01L021/02（28）
发明人 LEE E（3） AHN S J（2） AN S（2）
AN X（2） CHOE P（2） CHOI B（2）
CHOI B L（2） HWANG T（2） LEE E K（2）
LIU Z（2） WHANG D（2） WHANG D M（2）
公开年 2021（6） 2012（4） 2017（3） 2010（2） 2013（2） 2015（2） 2016（2） 2020（2） 2023（2）
申请年 2016（4）  2009（3）  2012（3）  2013（3）  2015（3）  2019（3）  2021（3）  2022（3）  2020（2） 
专利权人 SAMSUNG ELEC.（4） UNIV CALIFOR.（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Method for preparing graphene wafer in batches using carrier, involves using chemical vapour deposition process to prepare graphene film on substrate, in which angle between gas flow direction and substrate is provided with specified value.

LIU Z, JIANG B, GAO X

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J