国家/地区 欧洲专利局（EPO）（29）
IPC部 C（29）
IPC大类 C23（29）
IPC小类 C23C（29） C01B（26） B82Y（11）
H01L（11） B32B（9） C30B（9）
B01J（4） B05D（3） C04B（3）
B82B（2） H01B（2） H01J（2）
IPC C23C016/02（29）
发明人 SHIN H（4） SHIN H J（4） BYUN K（3）
BYUN K E（3） SHEN X（3） CHO Y（2）
CHO Y C（2） CHOI J（2） COJOCARU C（2）
LEE C（2） LEE C S（2） LEE E（2）
LI C（2） LI Y（2） SHIN K（2）
公开年 2013（6） 2021（6） 2017（4） 2015（3） 2011（2） 2022（2）
申请年 2020（5）  2011（4）  2013（4）  2017（4）  2008（2）  2014（2）  2016（2）  2021（2） 
专利权人 SAMSUNG ELEC.（4） CENT NAT REC.（2） ECOLE POLYTE.（2）

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composition useful as catalysts and electrodes, comprises a nanoporous carbon powder comprising nanopores having disposed in it copper metal nanostructures and an elemental copper nanowires.

NAGEL C J, BRODEUR C L, NAZEL C A J, BRODARD C L

Forming transition metal dichalcogenide thin film on a substrate by treating substrate with metal organic material, and synthesizing a transition metal dichalcogenide on the substrate.

BYUN K, KIM H, PARK T, SHIN H, AHN W, LEEM M, CHO Y, JIN H, PIAO T, SHEN X, LIN M, ZHAO L, BYUN K E, KIM H S, PARK T J, SHIN H J, AHN W S, CHO Y C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Formation of graphene layer on metal layer used in sensing applications, involves heating process chamber, introducing carbon including deposition gas into chamber and transporting precursors into metal layer.

GILLES OLLIVIER BORME J, LUIS MACHADO J, PEDRO DOS SANTOS HALL DE AGORR, BARBOSA QUEIROS R, JORGE PEIXEIRO DE FREITAS P