国家/地区 台湾（22）
IPC部 C（22）
IPC大类 C23（22）
IPC小类 C23C（22） H01L（22） C01B（13）
B82Y（6） C30B（6） B32B（5）
H01J（5） B82B（3） C25D（3）
B01J（2） B05D（2） C04B（2）
IPC H01L021/02（22）
发明人 NARKEVICIUTE I（3） VARADARAJAN B N（3） DIXON S（2）
GUINEY I（2） SHARMA K（2）
公开年 2021（6） 2022（6） 2013（3） 2010（2） 2011（2）
申请年 2021（6）  2022（4）  2009（3）  2020（3） 
专利权人 INT BUSINESS.（3） LAM RES CORP（3） APPLIED MATE.（2） CALIFORNIA I.（2）
PARAGRAF LTD（2）

Forming dual damascene structure on semiconductor substrate, involves selectively depositing carbon layer on exposed metal surface.

PARBATANI A, VAN SCHRAVENDIJK B J, VARADARAJAN B N, NARKEVICIUTE I, SRINIVASAN E, SHARMA K, KNARR R, SCHMITZ S, RAMANAN V, NOGAMI T, NGUYEN S V, HUANG H, SHOBHA H K, LI J, PEETHELA C B, EDELSTEIN D C

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F