国家/地区 美国（25）
IPC部 C（22） H（19） B（6）
IPC大类 H01（19） C01（15） C23（15）
B01（6） H05（3）
IPC小类 H01L（19） C01B（15） C23C（15）
B01J（6） H01J（6） H05H（2）
IPC C23C016/26（13） H01L021/768（9） H01L023/532（8）
C23C016/02（7） C01B031/02（6） C01B031/04（6）
C23C016/455（6） H01L021/02（6） H01L021/67（6）
B01J023/755（5） C01B032/182（5） C23C016/44（5）
H01J037/32（5） H01L021/205（5） H01L021/28（5）
发明人 MATSUMOTO T（20） IFUKU R（11） KAGAYA M（4）
NISHIDE D（4） WADA M（4） KASHIWAGI Y（3）
UEDA H（3） CLARK R D（2） KABUKI N（2）
MATSUMOTO TAKASHI（2） SUGIURA M（2）
公开年 2018（4） 2021（4） 2023（4） 2014（3） 2017（3） 2013（2） 2016（2） 2022（2）
申请年 2022（4）  2015（3）  2018（3）  2020（3）  2021（3）  2013（2）  2014（2）  2016（2）  2017（2） 
专利权人 TOKYO ELECTRON LTD（25）

Semiconductor device comprises stack of layers defining sidewall surface and comprising source and drain layers, channel structure extending through stack of layers, oriented in vertical direction perpendicular to main surface of stack of layers.

FULFORD H J, GARDNER M I

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Semiconductor device comprises substrate containing patterned copper film containing manganese, graphene layer disposed over exposed surfaces of copper film, first manganese-containing diffusion barrier layer, and first dielectric layer.

CLARK R D

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L