国家/地区 韩国（19）
IPC部 H（18） C（2）
IPC大类 H01（18） C30（2）
IPC小类 H01L（18） C30B（2）
IPC H01L033/04（5） H01L021/20（4） H01L033/20（4）
H01L033/14（3） H01L033/16（3） H01L033/22（3）
H01L051/52（3） C30B029/38（2） H01L033/06（2）
H01L033/26（2） H01L033/44（2） H01L051/54（2）
发明人 HWANG S W（19）
公开年 2012（17） 2011（2）
申请年 2010（19）
专利权人 SAMSUNG LED .（17） SAMSUNG ELEC.（4）

Quantum dot light emitting device e.g. LED used in display for lighting, has graphene quantum dot that is fixed on electron-transport layer and hole-transport layer is arranged above light-emitting layer.

HWANG S W, KIM J S, CHUNG H J, CHA N G, SONE C S

Graphene light emitting device, has multi-layer structure equipped with graphene that is prepared on substrate, insulating layer prepared on quantum dots that are formed on grapheme, and N type electrode prepared on substrate.

KIM J S, HWANG S W, CHA N G, PARK S E, SUNG Y K, SONE C S

Lamination structure of light emitting device, has graphene layer that is provided to cover quantum dot on base layer.

CHA N G, HWANG S W, CHUNG H J, SONE C S

Quantum dot light emitting device comprises substrate, graphene layer and luminous unit which comprises quantum dot light-emitting layer, where buffer layer is prepared on graphene layer.

HWANG S W, CHUNG H J, KIM J S, PARK T Y, SONE C S

Semiconductor light emitting device, has heat-release structure including metal nano pattern layer and graphene layer, which is contacted with light emitting unit, where nano pattern layer and graphene layer comprise streak patterns.

HWANG S W, CHUNG H J, YOO K H, SUNG Y K, SHIN Y H, SONE C S

Light emitting device package has protective film with graphene is equipped on encapsulating material.

HWANG S W, SUNG Y K, YOO K H, SHIN Y H, CHUNG H J, SONE C S

Graphene photonic crystal light emitting device, has graphene layer formed among conductive semiconductor layers and active layer, where one of conductive semiconductor layers is arranged on substrate.

HWANG S W, CHUNG H J, KIM J S, SONE C S

Quantum dot light emitting device, has hole-transport layer formed on quantum dot light-emitting layer, and graphene layer made of multiple graphene sheets, where quantum dot is formed within multiple nano holes.

CHA N G, HWANG S W, CHUNG H J, SONE C S

Method for manufacturing nitride single crystal of semiconductor LED, involves forming mask layer on nitride base layer, and forming multiple openings in upper side of mask layer, where mask layer is made of graphene.

CHUNG H J, HWANG S W, KIM M H, SEONG H K, LEE S S, CHA N G

Light emitting device, has conductivity type semiconductor layer prepared on board layer, and active layer and graphene layer prepared on conductivity type semiconductor layers, respectively, where holes are formed in graphene layer.

HWANG S W, CHUNG H J, SONE C S